We describe a method to control and detect in single-shot the electron spinstate of an individual donor in silicon with greatly enhanced sensitivity. Asilicon-based Single-Electron Transistor (SET) allows for spin-dependenttunneling of the donor electron directly into the SET island during theread-out phase. Simulations show that the charge transfer signals are typically\Delta q > 0.2 e - over an order of magnitude larger than achievable withmetallic SETs on the SiO2 surface. A complete spin-based qubit structure isobtained by adding a local Electron Spin Resonance line for coherent spincontrol. This architecture is ideally suited to demonstrate and study thecoherent properties of donor electron spins, but can be expanded and integratedwith classical control electronics in the context of scale-up.
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